Foxvillage239

• Описание
• Парт номер производителя: PMPB15XP,115
• Производитель: Nexperia USA Inc.
• Документация: Скачать файл
• Описание: MOSFET P-CH 12V 8.2A 6DFN
• Категория: Discrete Semiconductor Products

Nexperia AN90005 Understanding Power GaN FET data sheet parameters Note: the pin functions are different from a standard MOSFET: pin 1 is the gate, pin 2 is the source and pin 3 is the drain. Aaa-029293 G D S ZL power loop gate loop Fig. Conventional pin assignment aaa-029294 G S D ZL power loop gate loop Fig. Nexperia pin assignment. Nexperia is a global semiconductor company - expert in high-volume production of Discretes, MOSFET components and Analog & Logic ICs that meet.

• Дополнительно
• Packaging: Tape & Reel (TR)
• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Current – Continuous Drain (Id) @ 25°C: 8.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2875pF @ 6V
• Vgs (Max): ±12V
• FET Feature: –
• Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-DFN2020MD (2×2)
• Package / Case: 6-UDFN Exposed Pad

Nexperia Mosfet Handbook

Mosfet Handbook

Nexperia Mosfet Hs Code

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